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| PartNumber | IXFH10N100 | IXFH10N100P | IXFH10N100Q |
| Description | MOSFET 1KV 10A | Darlington Transistors MOSFET 10 Amps 1000V | MOSFET 12 Amps 1000V 1.05 Rds |
| Manufacturer | IXYS | IXYS | - |
| Product Category | MOSFET | Transistors - FETs, MOSFETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-247-3 | - | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 1 kV | - | - |
| Id Continuous Drain Current | 10 A | - | - |
| Rds On Drain Source Resistance | 1.2 Ohms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 300 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | HyperFET | Polar HiPerFET | - |
| Packaging | Tube | Tube | - |
| Height | 21.46 mm | - | - |
| Length | 16.26 mm | - | - |
| Series | IXFH10N100 | IXFH10N100P | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 5.3 mm | - | - |
| Brand | IXYS | - | - |
| Forward Transconductance Min | 10 S | - | - |
| Fall Time | 32 ns | 75 ns | - |
| Product Type | MOSFET | - | - |
| Rise Time | 33 ns | 45 ns | - |
| Factory Pack Quantity | 30 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 62 ns | 47 ns | - |
| Typical Turn On Delay Time | 21 ns | 38 ns | - |
| Unit Weight | 0.229281 oz | 0.229281 oz | - |
| Package Case | - | TO-247-3 | - |
| Pd Power Dissipation | - | 380 W | - |
| Vgs Gate Source Voltage | - | 30 V | - |
| Id Continuous Drain Current | - | 10 A | - |
| Vds Drain Source Breakdown Voltage | - | 1000 V | - |
| Vgs th Gate Source Threshold Voltage | - | 6.5 V | - |
| Rds On Drain Source Resistance | - | 1.4 Ohms | - |
| Qg Gate Charge | - | 56 nC | - |
| Forward Transconductance Min | - | 4.2 S | - |