IXFH13N80 vs IXFH13N80P vs IXFH13N80Q

 
PartNumberIXFH13N80IXFH13N80PIXFH13N80Q
DescriptionMOSFET 800V 13AMOSFET 13 Amps 800V 0.8 Rds
ManufacturerIXYS-IXYS
Product CategoryMOSFET-FETs - Single
RoHSY--
TechnologySi-Si
Mounting StyleThrough Hole-Through Hole
Package / CaseTO-247-3--
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage800 V--
Id Continuous Drain Current13 A--
Rds On Drain Source Resistance800 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 150 C-+ 150 C
Pd Power Dissipation300 W--
ConfigurationSingle-Single
Channel ModeEnhancement-Enhancement
TradenameHyperFET-HyperFET
PackagingTube-Tube
Height21.46 mm--
Length16.26 mm--
SeriesIXFH13N80-IXFH13N80
Transistor Type1 N-Channel-1 N-Channel
Width5.3 mm--
BrandIXYS--
Forward Transconductance Min14 S--
Fall Time32 ns-19 ns
Product TypeMOSFET--
Rise Time33 ns-36 ns
Factory Pack Quantity30--
SubcategoryMOSFETs--
Typical Turn Off Delay Time63 ns-55 ns
Typical Turn On Delay Time20 ns-23 ns
Unit Weight0.229281 oz-0.229281 oz
Package Case--TO-247-3
Pd Power Dissipation--250 W
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--13 A
Vds Drain Source Breakdown Voltage--800 V
Rds On Drain Source Resistance--700 mOhms
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