PartNumber | IXFH13N80 | IXFH13N80P | IXFH13N80Q |
Description | MOSFET 800V 13A | MOSFET 13 Amps 800V 0.8 Rds | |
Manufacturer | IXYS | - | IXYS |
Product Category | MOSFET | - | FETs - Single |
RoHS | Y | - | - |
Technology | Si | - | Si |
Mounting Style | Through Hole | - | Through Hole |
Package / Case | TO-247-3 | - | - |
Number of Channels | 1 Channel | - | 1 Channel |
Transistor Polarity | N-Channel | - | N-Channel |
Vds Drain Source Breakdown Voltage | 800 V | - | - |
Id Continuous Drain Current | 13 A | - | - |
Rds On Drain Source Resistance | 800 mOhms | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Minimum Operating Temperature | - 55 C | - | - 55 C |
Maximum Operating Temperature | + 150 C | - | + 150 C |
Pd Power Dissipation | 300 W | - | - |
Configuration | Single | - | Single |
Channel Mode | Enhancement | - | Enhancement |
Tradename | HyperFET | - | HyperFET |
Packaging | Tube | - | Tube |
Height | 21.46 mm | - | - |
Length | 16.26 mm | - | - |
Series | IXFH13N80 | - | IXFH13N80 |
Transistor Type | 1 N-Channel | - | 1 N-Channel |
Width | 5.3 mm | - | - |
Brand | IXYS | - | - |
Forward Transconductance Min | 14 S | - | - |
Fall Time | 32 ns | - | 19 ns |
Product Type | MOSFET | - | - |
Rise Time | 33 ns | - | 36 ns |
Factory Pack Quantity | 30 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 63 ns | - | 55 ns |
Typical Turn On Delay Time | 20 ns | - | 23 ns |
Unit Weight | 0.229281 oz | - | 0.229281 oz |
Package Case | - | - | TO-247-3 |
Pd Power Dissipation | - | - | 250 W |
Vgs Gate Source Voltage | - | - | 20 V |
Id Continuous Drain Current | - | - | 13 A |
Vds Drain Source Breakdown Voltage | - | - | 800 V |
Rds On Drain Source Resistance | - | - | 700 mOhms |