IXFH14N60P vs IXFH14N60P3 vs IXFH14N60

 
PartNumberIXFH14N60PIXFH14N60P3IXFH14N60
DescriptionMOSFET 600V 14AMOSFET Polar3 HiPerFETs Power MOSFETs
ManufacturerIXYSIXYS-
Product CategoryMOSFETMOSFET-
RoHSY--
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-247-3TO-247-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage600 V600 V-
Id Continuous Drain Current14 A14 A-
Rds On Drain Source Resistance550 mOhms540 mOhms-
Vgs Gate Source Voltage30 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation300 W--
ConfigurationSingleSingle-
Channel ModeEnhancement--
TradenameHiPerFETHiPerFET-
PackagingTubeTube-
Height21.46 mm--
Length16.26 mm--
SeriesIXFH14N60IXFH14N60-
Transistor Type1 N-Channel1 N-Channel-
Width5.3 mm--
BrandIXYSIXYS-
Forward Transconductance Min13 S--
Fall Time26 ns--
Product TypeMOSFETMOSFET-
Rise Time27 ns--
Factory Pack Quantity3030-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time70 ns--
Typical Turn On Delay Time23 ns--
Unit Weight0.229281 oz0.056438 oz-
Top