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| PartNumber | IXFH14N80P | IXFH14N85X | IXFH14N80 |
| Description | MOSFET DIODE Id14 BVdass800 | MOSFET DISCMSFT NCH ULTRJNCTN XCLASS | MOSFET 14 Amps 800V 0.7 Rds |
| Manufacturer | IXYS | IXYS | IXYS |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-247-3 | TO-247-3 | TO-247-3 |
| Number of Channels | 1 Channel | - | 1 Channel |
| Transistor Polarity | N-Channel | - | N-Channel |
| Vds Drain Source Breakdown Voltage | 800 V | - | 800 V |
| Id Continuous Drain Current | 14 A | - | 14 A |
| Rds On Drain Source Resistance | 720 mOhms | - | 700 mOhms |
| Vgs th Gate Source Threshold Voltage | 5.5 V | - | - |
| Vgs Gate Source Voltage | 30 V | - | 20 V |
| Qg Gate Charge | 61 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Maximum Operating Temperature | + 150 C | - | + 150 C |
| Pd Power Dissipation | 400 W | - | 300 W |
| Configuration | Single | - | Single |
| Channel Mode | Enhancement | - | Enhancement |
| Tradename | HiPerFET | HiPerFET | HyperFET |
| Packaging | Tube | Tube | Tube |
| Height | 21.46 mm | - | 21.46 mm |
| Length | 16.26 mm | - | 16.26 mm |
| Series | IXFH14N80 | X-Class | IXFH14N80 |
| Transistor Type | 1 N-Channel | - | 1 N-Channel |
| Type | PolarHV HiPerFET Power MOSFET | - | - |
| Width | 5.3 mm | - | 5.3 mm |
| Brand | IXYS | IXYS | IXYS |
| Forward Transconductance Min | 8 S | - | - |
| Fall Time | 27 ns | - | 32 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 29 ns | - | 33 ns |
| Factory Pack Quantity | 30 | 30 | 30 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 62 ns | - | 63 ns |
| Typical Turn On Delay Time | 26 ns | - | 20 ns |
| Unit Weight | 0.229281 oz | 0.211644 oz | 0.229281 oz |