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| PartNumber | IXFH16N120P | IXFH160N15T2 | IXFH160N15T |
| Description | MOSFET 1 | MOSFET Trench T2 HiperFET Power MOSFET | MOSFET N-CH 150V 160A TO-247 |
| Manufacturer | IXYS | IXYS | IXYS |
| Product Category | MOSFET | MOSFET | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-247-3 | TO-247-3 | - |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 1.2 kV | 150 V | - |
| Id Continuous Drain Current | 16 A | 160 A | - |
| Rds On Drain Source Resistance | 950 mOhms | 9 mOhms | - |
| Vgs Gate Source Voltage | 30 V | 20 V | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 175 C | + 175 C |
| Pd Power Dissipation | 660 W | 880 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | HiPerFET | HiPerFET | TrenchT2 HiperFET |
| Packaging | Tube | Tube | Tube |
| Height | 21.46 mm | 21.46 mm | - |
| Length | 16.26 mm | 16.26 mm | - |
| Series | IXFH16N120 | IXFH160N15 | IXFH160N15 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 5.3 mm | 5.3 mm | - |
| Brand | IXYS | IXYS | - |
| Fall Time | 35 ns | 26 ns | 26 ns |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 28 ns | 15 ns | 15 ns |
| Factory Pack Quantity | 30 | 30 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 66 ns | 50 ns | 50 ns |
| Typical Turn On Delay Time | 35 ns | 37 ns | 37 ns |
| Unit Weight | 0.229281 oz | 0.056438 oz | 0.056438 oz |
| Vgs th Gate Source Threshold Voltage | - | 4.5 V | - |
| Qg Gate Charge | - | 253 nC | - |
| Type | - | TrenchT2 HiperFET Power MOSFET | - |
| Forward Transconductance Min | - | 80 S | - |
| Package Case | - | - | TO-247-3 |
| Pd Power Dissipation | - | - | 880 W |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 160 A |
| Vds Drain Source Breakdown Voltage | - | - | 150 V |
| Vgs th Gate Source Threshold Voltage | - | - | 4.5 V |
| Rds On Drain Source Resistance | - | - | 9 mOhms |
| Qg Gate Charge | - | - | 253 nC |
| Forward Transconductance Min | - | - | 80 S |