IXFH16N50P vs IXFH16N120P vs IXFH16N50P3

 
PartNumberIXFH16N50PIXFH16N120PIXFH16N50P3
DescriptionMOSFET 500V 16AMOSFET 1MOSFET Polar3 HiPerFET Power MOSFET
ManufacturerIXYSIXYSIXYS
Product CategoryMOSFETMOSFETMOSFET
RoHSYY-
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-247-3TO-247-3TO-247-3
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage500 V1.2 kV500 V
Id Continuous Drain Current16 A16 A16 A
Rds On Drain Source Resistance400 mOhms950 mOhms360 mOhms
Vgs Gate Source Voltage30 V30 V-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation300 W660 W-
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancement-
TradenameHiPerFETHiPerFETHiPerFET
PackagingTubeTubeTube
Height21.46 mm21.46 mm-
Length16.26 mm16.26 mm-
SeriesIXFH16N50IXFH16N120IXFH16N50
Transistor Type1 N-Channel1 N-Channel1 N-Channel
Width5.3 mm5.3 mm-
BrandIXYSIXYSIXYS
Forward Transconductance Min16 S--
Fall Time22 ns35 ns-
Product TypeMOSFETMOSFETMOSFET
Rise Time25 ns28 ns-
Factory Pack Quantity303030
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time70 ns66 ns-
Typical Turn On Delay Time23 ns35 ns-
Unit Weight0.229281 oz0.229281 oz0.056438 oz
Top