IXFH20N100P vs IXFH20N50P3 vs IXFH20N50

 
PartNumberIXFH20N100PIXFH20N50P3IXFH20N50
DescriptionMOSFET 20 Amps 1000V 1 RdsMOSFET Polar3 HiPerFET Power MOSFET
ManufacturerIXYSIXYS-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-247-3TO-247-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage1 kV500 V-
Id Continuous Drain Current20 A20 A-
Rds On Drain Source Resistance570 mOhms300 mOhms-
Vgs th Gate Source Threshold Voltage6.5 V--
Vgs Gate Source Voltage30 V--
Qg Gate Charge126 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation660 W--
ConfigurationSingleSingle-
Channel ModeEnhancement--
TradenameHiPerFETHiPerFET-
PackagingTubeTube-
Height21.46 mm--
Length16.26 mm--
SeriesIXFH20N100IXFH20N50-
Transistor Type1 N-Channel1 N-Channel-
TypePolar Power MOSFET HiPerFET--
Width5.3 mm--
BrandIXYSIXYS-
Forward Transconductance Min8 S--
Fall Time45 ns--
Product TypeMOSFETMOSFET-
Rise Time37 ns--
Factory Pack Quantity3030-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time56 ns--
Typical Turn On Delay Time40 ns--
Unit Weight0.229281 oz0.056438 oz-
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