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| PartNumber | IXFH26N100X | IXFH26N50 | IXFH26N48 |
| Description | MOSFET 1000V 26A TO-247 Power MOSFET | MOSFET DIODE Id26 BVdass500 | |
| Manufacturer | IXYS | IXYS | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-247-3 | TO-247-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 1000 V | 500 V | - |
| Id Continuous Drain Current | 8 A | 26 A | - |
| Rds On Drain Source Resistance | 320 mOhms | 200 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 3.5 V | - | - |
| Vgs Gate Source Voltage | 30 V | 20 V | - |
| Qg Gate Charge | 113 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 860 W | 300 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | HiPerFET | HyperFET | - |
| Packaging | Tube | Tube | - |
| Series | X-Class | IXFH26N50 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Brand | IXYS | IXYS | - |
| Forward Transconductance Min | 11 S | 21 S | - |
| Fall Time | 8 ns | 30 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 20 ns | 33 ns | - |
| Factory Pack Quantity | 30 | 30 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 62 ns | 65 ns | - |
| Typical Turn On Delay Time | 29 ns | 16 ns | - |
| Height | - | 21.46 mm | - |
| Length | - | 16.26 mm | - |
| Width | - | 5.3 mm | - |
| Unit Weight | - | 0.229281 oz | - |