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| PartNumber | IXFH26N50P | IXFH26N50P3 | IXFH26N50 |
| Description | MOSFET HiPERFET Id26 BVdass500 | MOSFET Polar3 HiPerFET Power MOSFET | MOSFET DIODE Id26 BVdass500 |
| Manufacturer | IXYS | IXYS | IXYS |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-247-3 | TO-247-3 | TO-247-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 500 V | 500 V | 500 V |
| Id Continuous Drain Current | 26 A | 26 A | 26 A |
| Rds On Drain Source Resistance | 230 mOhms | 240 mOhms | 200 mOhms |
| Vgs Gate Source Voltage | 30 V | 30 V | 20 V |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 400 W | 500 W | 300 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | HiPerFET | HiPerFET | HyperFET |
| Packaging | Tube | Tube | Tube |
| Height | 21.46 mm | 21.46 mm | 21.46 mm |
| Length | 16.26 mm | 16.26 mm | 16.26 mm |
| Series | IXFH26N50 | IXFH26N50 | IXFH26N50 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 5.3 mm | 5.3 mm | 5.3 mm |
| Brand | IXYS | IXYS | IXYS |
| Forward Transconductance Min | 26 S | 14 S | 21 S |
| Fall Time | 20 ns | 5 ns | 30 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 25 ns | 7 ns | 33 ns |
| Factory Pack Quantity | 30 | 30 | 30 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 58 ns | 38 ns | 65 ns |
| Typical Turn On Delay Time | 20 ns | 21 ns | 16 ns |
| Unit Weight | 0.229281 oz | 0.056438 oz | 0.229281 oz |
| Vgs th Gate Source Threshold Voltage | - | 5 V | - |
| Qg Gate Charge | - | 42 nC | - |
| Type | - | Polar3 HiPerFET Power MOSFET | - |