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| PartNumber | IXFH36N50P | IXFH36N55Q | IXFH36N55Q2 |
| Description | MOSFET 500V 36A | MOSFET 36 Amps 550V 0.16 Rds | MOSFET 36 Amps 550V 0.16 Rds |
| Manufacturer | IXYS | IXYS | IXYS |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-247-3 | TO-247-3 | TO-247-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 500 V | 550 V | 550 V |
| Id Continuous Drain Current | 36 A | 36 A | 36 A |
| Rds On Drain Source Resistance | 170 mOhms | 160 mOhms | 180 mOhms |
| Vgs Gate Source Voltage | 30 V | 30 V | 30 V |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 540 W | 500 W | 560 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | HiPerFET | HyperFET | HyperFET |
| Packaging | Tube | Tube | Tube |
| Height | 21.46 mm | 21.46 mm | 21.46 mm |
| Length | 16.26 mm | 16.26 mm | 16.26 mm |
| Series | IXFH36N50 | IXFH36N55 | IXFH36N55 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 5.3 mm | 5.3 mm | 5.3 mm |
| Brand | IXYS | IXYS | IXYS |
| Forward Transconductance Min | 36 S | - | - |
| Fall Time | 21 ns | 15 ns | 8 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 27 ns | 18 ns | 13 ns |
| Factory Pack Quantity | 30 | 30 | 30 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 75 ns | 54 ns | 42 ns |
| Typical Turn On Delay Time | 25 ns | 17 ns | 17 ns |
| Unit Weight | 0.229281 oz | 0.229281 oz | 0.229281 oz |