 | |  | |
| PartNumber | IXFH6N100F | IXFH6N100 | IXFH6N100-ND |
| Description | MOSFET HiPerRF Power Mosfet 1000V 6A | MOSFET 1KV 6A | |
| Manufacturer | IXYS | IXYS | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-247-3 | TO-247-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 1 kV | 1 kV | - |
| Id Continuous Drain Current | 6 A | 6 A | - |
| Rds On Drain Source Resistance | 1.9 Ohms | 2 Ohms | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 180 W | 180 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Height | 21.46 mm | 21.46 mm | - |
| Length | 16.26 mm | 16.26 mm | - |
| Series | IXFH6N100 | IXFH6N100 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 5.3 mm | 5.3 mm | - |
| Brand | IXYS | IXYS | - |
| Fall Time | 8.3 ns | 60 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 8.6 ns | 40 ns | - |
| Factory Pack Quantity | 30 | 30 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 31 ns | 100 ns | - |
| Typical Turn On Delay Time | 11 ns | 35 ns | - |
| Unit Weight | 0.229281 oz | 0.229281 oz | - |
| Tradename | - | HyperFET | - |
| Packaging | - | Tube | - |
| Forward Transconductance Min | - | 6 S | - |