IXFH74N20P vs IXFH74N20T vs IXFH74N20

 
PartNumberIXFH74N20PIXFH74N20TIXFH74N20
DescriptionMOSFET 74 Amps 200V 0.034 RdsMOSFET 74 Amps 200V 0.03 Rds
ManufacturerIXYS-IXYS
Product CategoryMOSFET-FETs - Single
RoHSY--
TechnologySi-Si
Mounting StyleThrough Hole-Through Hole
Package / CaseTO-247-3--
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage200 V--
Id Continuous Drain Current74 A--
Rds On Drain Source Resistance34 mOhms--
Vgs th Gate Source Threshold Voltage5 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge107 nC--
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 175 C-+ 150 C
Pd Power Dissipation480 W--
ConfigurationSingle-Single
Channel ModeEnhancement-Enhancement
TradenameHiPerFET-HyperFET
PackagingTube-Tube
Height21.46 mm--
Length16.26 mm--
SeriesIXFH74N20-IXFH74N20
Transistor Type1 N-Channel-1 N-Channel
TypePolarHT Power MOSFET HiPerFET--
Width5.3 mm--
BrandIXYS--
Forward Transconductance Min30 S--
Fall Time21 ns-26 ns
Product TypeMOSFET--
Rise Time21 ns-55 ns
Factory Pack Quantity30--
SubcategoryMOSFETs--
Typical Turn Off Delay Time60 ns-120 ns
Typical Turn On Delay Time23 ns-40 ns
Unit Weight0.229281 oz-6500 g
Package Case--TO-247-3
Pd Power Dissipation--360 W
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--74 A
Vds Drain Source Breakdown Voltage--200 V
Rds On Drain Source Resistance--30 mOhms
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