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| PartNumber | IXFH80N10 | IXFH80N100 | IXFH80N10Q |
| Description | MOSFET 80 Amps 100V 0.125 Rds | MOSFET 100V 80A | |
| Manufacturer | IXYS | - | IXYS |
| Product Category | MOSFET | - | IC Chips |
| RoHS | Y | - | - |
| Technology | Si | - | Si |
| Mounting Style | Through Hole | - | Through Hole |
| Package / Case | TO-247-3 | - | - |
| Number of Channels | 1 Channel | - | 1 Channel |
| Transistor Polarity | N-Channel | - | N-Channel |
| Vds Drain Source Breakdown Voltage | 100 V | - | - |
| Id Continuous Drain Current | 80 A | - | - |
| Rds On Drain Source Resistance | 12.5 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Maximum Operating Temperature | + 150 C | - | + 150 C |
| Pd Power Dissipation | 300 W | - | - |
| Configuration | Single | - | Single |
| Channel Mode | Enhancement | - | Enhancement |
| Tradename | HyperFET | - | HyperFET |
| Packaging | Tube | - | Tube |
| Height | 21.46 mm | - | - |
| Length | 16.26 mm | - | - |
| Series | IXFH80N10 | - | IXFH80N10 |
| Transistor Type | 1 N-Channel | - | 1 N-Channel |
| Width | 5.3 mm | - | - |
| Brand | IXYS | - | - |
| Fall Time | 26 ns | - | 30 ns |
| Product Type | MOSFET | - | - |
| Rise Time | 63 ns | - | 70 ns |
| Factory Pack Quantity | 30 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 90 ns | - | 68 ns |
| Typical Turn On Delay Time | 41 ns | - | 30 ns |
| Unit Weight | 0.229281 oz | - | 0.229281 oz |
| Package Case | - | - | TO-247-3 |
| Pd Power Dissipation | - | - | 360 W |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 80 A |
| Vds Drain Source Breakdown Voltage | - | - | 100 V |
| Rds On Drain Source Resistance | - | - | 15 mOhms |
| Forward Transconductance Min | - | - | 45 S |