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| PartNumber | IXFH88N30P | IXFH88N20Q | IXFH88N30 |
| Description | MOSFET 88 Amps 300V 0.04 Rds | MOSFET 88 Amps 200V 0.03 Rds | |
| Manufacturer | IXYS | IXYS | IXYS |
| Product Category | MOSFET | MOSFET | FETs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-247-3 | TO-247-3 | - |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 300 V | 200 V | - |
| Id Continuous Drain Current | 88 A | 88 A | - |
| Rds On Drain Source Resistance | 40 mOhms | 30 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 5 V | - | - |
| Vgs Gate Source Voltage | 20 V | 30 V | - |
| Qg Gate Charge | 180 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 600 W | 500 W | - |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | HiPerFET | HyperFET | Polar HiPerFET |
| Packaging | Tube | Tube | Tube |
| Height | 21.46 mm | 21.46 mm | - |
| Length | 16.26 mm | 16.26 mm | - |
| Series | IXFH88N30 | IXFH88N20 | IXFH88N30 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Type | Polar HiPerFET Power MOSFET | - | - |
| Width | 5.3 mm | 5.3 mm | - |
| Brand | IXYS | IXYS | - |
| Forward Transconductance Min | 40 S | - | - |
| Fall Time | 25 ns | 15 ns | 25 ns |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 24 ns | 20 ns | 24 ns |
| Factory Pack Quantity | 30 | 30 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 96 ns | 61 ns | 96 ns |
| Typical Turn On Delay Time | 25 ns | 18 ns | 25 ns |
| Unit Weight | 0.229281 oz | 0.229281 oz | 0.229281 oz |
| Package Case | - | - | TO-247-3 |
| Pd Power Dissipation | - | - | 600 W |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 88 A |
| Vds Drain Source Breakdown Voltage | - | - | 300 V |
| Vgs th Gate Source Threshold Voltage | - | - | 5 V |
| Rds On Drain Source Resistance | - | - | 40 mOhms |
| Qg Gate Charge | - | - | 180 nC |
| Forward Transconductance Min | - | - | 40 S |