PartNumber | IXFH9N80 | IXFH9N65 | IXFH9N80Q |
Description | MOSFET 9 Amps 800V 0.9 Rds | Darlington Transistors MOSFET 9 Amps 800V 1.1 Rds | |
Manufacturer | IXYS | - | IXYS |
Product Category | MOSFET | - | Transistors - FETs, MOSFETs - Single |
RoHS | Y | - | - |
Technology | Si | - | Si |
Mounting Style | Through Hole | - | Through Hole |
Package / Case | TO-247-3 | - | - |
Number of Channels | 1 Channel | - | 1 Channel |
Transistor Polarity | N-Channel | - | N-Channel |
Vds Drain Source Breakdown Voltage | 800 V | - | - |
Id Continuous Drain Current | 9 A | - | - |
Rds On Drain Source Resistance | 900 mOhms | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Minimum Operating Temperature | - 55 C | - | - 55 C |
Maximum Operating Temperature | + 150 C | - | + 150 C |
Pd Power Dissipation | 180 W | - | - |
Configuration | Single | - | Single |
Channel Mode | Enhancement | - | Enhancement |
Tradename | HyperFET | - | HyperFET |
Packaging | Tube | - | Tube |
Height | 21.46 mm | - | - |
Length | 16.26 mm | - | - |
Series | IXFH9N80 | - | IXFH9N80 |
Transistor Type | 1 N-Channel | - | 1 N-Channel |
Width | 5.3 mm | - | - |
Brand | IXYS | - | - |
Fall Time | 35 ns | - | 13 ns |
Product Type | MOSFET | - | - |
Rise Time | 15 ns | - | 20 ns |
Factory Pack Quantity | 30 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 70 ns | - | 42 ns |
Typical Turn On Delay Time | 35 ns | - | 20 ns |
Unit Weight | 0.229281 oz | - | 0.229281 oz |
Package Case | - | - | TO-247-3 |
Pd Power Dissipation | - | - | 180 W |
Vgs Gate Source Voltage | - | - | 20 V |
Id Continuous Drain Current | - | - | 9 A |
Vds Drain Source Breakdown Voltage | - | - | 800 V |
Rds On Drain Source Resistance | - | - | 1.1 Ohms |