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| PartNumber | IXFK150N10 | IXFK150N15 | IXFK150N15P |
| Description | MOSFET 150 Amps 100V | MOSFET 150 Amps 150V 0.0125 Rds | MOSFET 170 Amps 150V 0.013 Rds |
| Manufacturer | IXYS | IXYS | IXYS |
| Product Category | MOSFET | MOSFET | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-264-3 | TO-264-3 | - |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 100 V | 150 V | - |
| Id Continuous Drain Current | 150 A | 150 A | - |
| Rds On Drain Source Resistance | 12 mOhms | 12.5 mOhms | - |
| Configuration | Single | Single | Single |
| Tradename | HyperFET | HyperFET | HyperFET |
| Packaging | Tube | Tube | Tube |
| Series | IXFK150N10 | IXFK150N15 | IXFK150N15 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Brand | IXYS | IXYS | - |
| Product Type | MOSFET | MOSFET | - |
| Factory Pack Quantity | 25 | 25 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Unit Weight | 0.352740 oz | 0.352740 oz | 0.352740 oz |
| Vgs Gate Source Voltage | - | 20 V | - |
| Minimum Operating Temperature | - | - 55 C | - 55 C |
| Maximum Operating Temperature | - | + 150 C | + 175 C |
| Pd Power Dissipation | - | 560 W | - |
| Channel Mode | - | Enhancement | Enhancement |
| Height | - | 26.16 mm | - |
| Length | - | 19.96 mm | - |
| Width | - | 5.13 mm | - |
| Fall Time | - | 45 ns | 28 ns |
| Rise Time | - | 60 ns | 33 ns |
| Typical Turn Off Delay Time | - | 110 ns | 100 ns |
| Typical Turn On Delay Time | - | 50 ns | 30 ns |
| Package Case | - | - | TO-264-3 |
| Pd Power Dissipation | - | - | 714 W |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 150 A |
| Vds Drain Source Breakdown Voltage | - | - | 150 V |
| Rds On Drain Source Resistance | - | - | 13 mOhms |