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| PartNumber | IXFK170N10P | IXFK170N20P | IXFK170N10 |
| Description | MOSFET PolarHT HiperFET 100v, 170A | MOSFET 170 Amps 200V 0.014 Rds | MOSFET 170 Amps 100V |
| Manufacturer | IXYS | IXYS | IXYS |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-264-3 | TO-264-3 | TO-264-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 100 V | 200 V | 100 V |
| Id Continuous Drain Current | 170 A | 170 A | 170 A |
| Rds On Drain Source Resistance | 9 mOhms | 14 mOhms | 10 mOhms |
| Vgs th Gate Source Threshold Voltage | 5 V | 5 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
| Qg Gate Charge | 198 nC | 185 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 150 C |
| Pd Power Dissipation | 714 W | 1.25 kW | 560 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | HiPerFET | HiPerFET | HyperFET |
| Packaging | Tube | Tube | Tube |
| Height | 26.59 mm | 26.59 mm | 26.16 mm |
| Length | 20.29 mm | 20.29 mm | 19.96 mm |
| Series | IXFK170N10 | IXFK170N20 | IXFK170N10 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Type | PolarHT HiPerFET Power MOSFET | Polar Power MOSFET HiPerFET | - |
| Width | 5.31 mm | 5.31 mm | 5.13 mm |
| Brand | IXYS | IXYS | IXYS |
| Forward Transconductance Min | 45 S | 45 S | - |
| Fall Time | 33 ns | 14 ns | 79 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 50 ns | 25 ns | 90 ns |
| Factory Pack Quantity | 25 | 25 | 25 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 90 ns | 50 ns | 158 ns |
| Typical Turn On Delay Time | 35 ns | 40 ns | 40 ns |
| Unit Weight | 0.352740 oz | 0.352740 oz | 0.352740 oz |