IXFK32N100P vs IXFK320N17T2 vs IXFK32N100Q3

 
PartNumberIXFK32N100PIXFK320N17T2IXFK32N100Q3
DescriptionMOSFET 32 Amps 1000V 0.32 RdsMOSFET GigaMOS Trench T2 HiperFET PWR MOSFETIGBT Transistors MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/32A
ManufacturerIXYSIXYSIXYS
Product CategoryMOSFETMOSFETTransistors - FETs, MOSFETs - Single
RoHSYY-
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-264-3TO-264-
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage1 kV--
Id Continuous Drain Current32 A--
Rds On Drain Source Resistance320 mOhms--
Vgs th Gate Source Threshold Voltage6.5 V--
Vgs Gate Source Voltage30 V--
Qg Gate Charge225 nC--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 175 C+ 150 C
Pd Power Dissipation960 W1670 W-
ConfigurationSingle-Single
Channel ModeEnhancement--
TradenameHiPerFETHiPerFETHyperFET
PackagingTubeTubeTube
Height26.16 mm--
Length19.96 mm--
SeriesIXFK32N100IXFK320N17IXFK32N100
Transistor Type1 N-Channel-1 N-Channel
TypePolar Power MOSFET HiPerFET--
Width5.13 mm--
BrandIXYSIXYS-
Forward Transconductance Min13 S--
Fall Time43 ns230 ns-
Product TypeMOSFETMOSFET-
Rise Time55 ns170 ns250 ns
Factory Pack Quantity2525-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time76 ns--
Typical Turn On Delay Time50 ns--
Unit Weight0.352740 oz0.352740 oz0.264555 oz
Product-MOSFET Gate Drivers-
Package Case--TO-264-3
Pd Power Dissipation--1.25 kW
Vgs Gate Source Voltage--30 V
Id Continuous Drain Current--32 A
Vds Drain Source Breakdown Voltage--1000 V
Rds On Drain Source Resistance--320 mOhms
Qg Gate Charge--195 nC
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