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| PartNumber | IXFK60N55Q2 | IXFK62N25 | IXFK60N25Q |
| Description | MOSFET 60 Amps 550V 0.09 Rds | MOSFET 60 Amps 250V 0.047 Rds | |
| Manufacturer | IXYS | - | IXYS |
| Product Category | MOSFET | - | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | - | - |
| Technology | Si | - | Si |
| Mounting Style | Through Hole | - | Through Hole |
| Package / Case | TO-264-3 | - | - |
| Number of Channels | 1 Channel | - | 1 Channel |
| Transistor Polarity | N-Channel | - | N-Channel |
| Vds Drain Source Breakdown Voltage | 550 V | - | - |
| Id Continuous Drain Current | 60 A | - | - |
| Rds On Drain Source Resistance | 88 mOhms | - | - |
| Vgs Gate Source Voltage | 30 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Maximum Operating Temperature | + 150 C | - | + 150 C |
| Pd Power Dissipation | 735 W | - | - |
| Configuration | Single | - | Single |
| Channel Mode | Enhancement | - | Enhancement |
| Tradename | HyperFET | - | HyperFET |
| Packaging | Tube | - | Tube |
| Height | 26.16 mm | - | - |
| Length | 19.96 mm | - | - |
| Series | IXFK60N55 | - | IXFK60N25 |
| Transistor Type | 1 N-Channel | - | 1 N-Channel |
| Width | 5.13 mm | - | - |
| Brand | IXYS | - | - |
| Fall Time | 9 ns | - | 25 ns |
| Product Type | MOSFET | - | - |
| Rise Time | 14 ns | - | 60 ns |
| Factory Pack Quantity | 25 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 57 ns | - | 80 ns |
| Typical Turn On Delay Time | 22 ns | - | 27 ns |
| Unit Weight | 0.352740 oz | - | 0.352740 oz |
| Package Case | - | - | TO-264-3 |
| Pd Power Dissipation | - | - | 360 W |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 60 A |
| Vds Drain Source Breakdown Voltage | - | - | 250 V |
| Rds On Drain Source Resistance | - | - | 47 mOhms |