IXFK80N15Q vs IXFK80N10Q vs IXFK80N20

 
PartNumberIXFK80N15QIXFK80N10QIXFK80N20
DescriptionMOSFET 80 Amps 150V 0.0225 RdsMOSFET N-CH TO-264AAMOSFET 80 Amps 200V 0.03 Rds
ManufacturerIXYS-IXYS
Product CategoryMOSFET-Transistors - FETs, MOSFETs - Single
RoHSY--
TechnologySi-Si
Mounting StyleThrough Hole-Through Hole
Package / CaseTO-264-3--
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage150 V--
Id Continuous Drain Current80 A--
Rds On Drain Source Resistance22.5 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 150 C-+ 150 C
Pd Power Dissipation360 W--
ConfigurationSingle-Single
Channel ModeEnhancement-Enhancement
TradenameHyperFET-HyperFET
PackagingTube-Tube
Height26.16 mm--
Length19.96 mm--
SeriesIXFK80N15-IXFK80N20
Transistor Type1 N-Channel-1 N-Channel
Width5.13 mm--
BrandIXYS--
Fall Time20 ns-26 ns
Product TypeMOSFET--
Rise Time55 ns-55 ns
Factory Pack Quantity25--
SubcategoryMOSFETs--
Typical Turn Off Delay Time68 ns-120 ns
Typical Turn On Delay Time30 ns-40 ns
Unit Weight0.352740 oz-0.352740 oz
Package Case--TO-264-3
Pd Power Dissipation--360 W
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--80 A
Vds Drain Source Breakdown Voltage--200 V
Rds On Drain Source Resistance--30 mOhms
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