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| PartNumber | IXFL100N50P | IXFL132N50P3 | IXFL210N30P3 |
| Description | MOSFET tbd Amps 500V 0.06 Ohms Rds | MOSFET Polar3 HiPerFET Power MOSFET | MOSFET N-Channel: Power MOSFET w/Fast Diode |
| Manufacturer | IXYS | IXYS | IXYS |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | - | - |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-264-3 | TO-264-3 | TO-264-3 |
| Number of Channels | 1 Channel | - | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 500 V | 500 V | 300 V |
| Id Continuous Drain Current | 70 A | 63 A | 108 A |
| Rds On Drain Source Resistance | 52 mOhms | 43 mOhms | 16 mOhms |
| Vgs th Gate Source Threshold Voltage | 5 V | - | - |
| Vgs Gate Source Voltage | 30 V | - | - |
| Qg Gate Charge | 240 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 625 W | - | - |
| Configuration | Single | - | Single |
| Channel Mode | Enhancement | - | - |
| Tradename | HiPerFET | HiPerFET | HiPerFET |
| Packaging | Tube | Tube | Tube |
| Height | 26.42 mm | - | - |
| Length | 20.29 mm | - | - |
| Series | IXFL100N50 | IXFL132N50 | IXFL210N30 |
| Transistor Type | 1 N-Channel | - | 1 N-Channel |
| Type | PolarHV HiPerFET Power MOSFET ISOPLUS264 | - | - |
| Width | 5.21 mm | - | - |
| Brand | IXYS | IXYS | IXYS |
| Forward Transconductance Min | 50 S | - | - |
| Fall Time | 26 ns | - | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 29 ns | - | - |
| Factory Pack Quantity | 25 | 25 | 25 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 110 ns | - | - |
| Typical Turn On Delay Time | 36 ns | - | - |
| Unit Weight | 0.264555 oz | 0.264555 oz | 0.264555 oz |