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| PartNumber | IXFL30N120P | IXFL32N120P | IXFL34N100 |
| Description | MOSFET 30 Amps 1200V 0.35 Rds | MOSFET 32 Amps 1200V | MOSFET 34 Amps 1000V 0.28W Rds |
| Manufacturer | IXYS | IXYS | IXYS |
| Product Category | MOSFET | MOSFET | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | SMD/SMT |
| Package / Case | TO-264-3 | TO-264-3 | - |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 1.2 kV | 1.2 kV | - |
| Id Continuous Drain Current | 18 A | 24 A | - |
| Rds On Drain Source Resistance | 380 mOhms | 340 mOhms | - |
| Vgs Gate Source Voltage | 30 V | 30 V | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 357 W | 520 W | - |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | HiPerFET | HiPerFET | HyperFET |
| Packaging | Tube | Tube | Tube |
| Height | 26.42 mm | 26.42 mm | - |
| Length | 20.29 mm | 20.29 mm | - |
| Series | IXFL30N120 | IXFL32N120 | IXFL34N100 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 5.21 mm | 5.21 mm | - |
| Brand | IXYS | IXYS | - |
| Fall Time | 56 ns | 51 ns | 30 ns |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 60 ns | 62 ns | 65 ns |
| Factory Pack Quantity | 25 | 25 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 95 ns | 88 ns | 110 ns |
| Typical Turn On Delay Time | 57 ns | 70 ns | 41 ns |
| Unit Weight | 0.264555 oz | 0.264555 oz | 0.264555 oz |
| Package Case | - | - | TO-264-3 |
| Pd Power Dissipation | - | - | 550 W |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 30 A |
| Vds Drain Source Breakdown Voltage | - | - | 1000 V |
| Rds On Drain Source Resistance | - | - | 300 mOhms |