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| PartNumber | IXFN150N65X2 | IXFN150N10 | IXFN150N15 |
| Description | MOSFET 650V/145A Ultra Junction X2-Class | MOSFET 150 Amps 100V | MOSFET 150V 150A |
| Manufacturer | IXYS | IXYS | IXYS |
| Product Category | MOSFET | MOSFET | Module |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | Chassis Mount | Chassis Mount | SMD/SMT |
| Package / Case | SOT-227-4 | SOT-227-4 | - |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 650 V | 100 V | - |
| Id Continuous Drain Current | 145 A | 150 A | - |
| Rds On Drain Source Resistance | 17 mOhms | 12 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 3.5 V | - | - |
| Vgs Gate Source Voltage | 10 V | 20 V | - |
| Qg Gate Charge | 355 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 1040 W | 520 W | - |
| Configuration | Single | Single | Single Dual Source |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | HiPerFET | - | HyperFET |
| Packaging | Tube | Tube | Tube |
| Series | 650V Ultra Junction X2 | IXFN150N10 | IXFN150N15 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Brand | IXYS | IXYS | - |
| Forward Transconductance Min | 56 S | - | - |
| Fall Time | 13 ns | 60 ns | 45 ns |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 30 ns | 60 ns | 60 ns |
| Factory Pack Quantity | 10 | 10 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 100 ns | 100 ns | 110 ns |
| Typical Turn On Delay Time | 55 ns | 30 ns | 50 ns |
| Unit Weight | 1.058219 oz | 1.058219 oz | 1.340411 oz |
| Height | - | 9.6 mm | - |
| Length | - | 38.23 mm | - |
| Width | - | 25.42 mm | - |
| Package Case | - | - | SOT-227-4 |
| Pd Power Dissipation | - | - | 600 W |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 150 A |
| Vds Drain Source Breakdown Voltage | - | - | 150 V |
| Rds On Drain Source Resistance | - | - | 12.5 mOhms |
| Forward Transconductance Min | - | - | 75 S |