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| PartNumber | IXFN50N120SIC | IXFN50N50 | IXFN50N120SK |
| Description | MOSFET SICARBIDE-DISCRETE MOSFET (MIN | MOSFET 50 Amps 500V 0.1 Rds | MOSFET N-CH |
| Manufacturer | IXYS | IXYS | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Tradename | 0 | HyperFET | - |
| Packaging | Tube | Tube | - |
| Brand | IXYS | IXYS | - |
| Product Type | MOSFET | MOSFET | - |
| Factory Pack Quantity | 10 | 10 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Technology | - | Si | - |
| Mounting Style | - | Chassis Mount | - |
| Package / Case | - | SOT-227-4 | - |
| Number of Channels | - | 1 Channel | - |
| Transistor Polarity | - | N-Channel | - |
| Vds Drain Source Breakdown Voltage | - | 500 V | - |
| Id Continuous Drain Current | - | 50 A | - |
| Rds On Drain Source Resistance | - | 100 mOhms | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Pd Power Dissipation | - | 600 W | - |
| Configuration | - | Single | - |
| Channel Mode | - | Enhancement | - |
| Height | - | 9.6 mm | - |
| Length | - | 38.23 mm | - |
| Series | - | IXFN50N50 | - |
| Transistor Type | - | 1 N-Channel | - |
| Width | - | 25.42 mm | - |
| Fall Time | - | 45 ns | - |
| Rise Time | - | 60 ns | - |
| Typical Turn Off Delay Time | - | 120 ns | - |
| Typical Turn On Delay Time | - | 45 ns | - |
| Unit Weight | - | 1.058219 oz | - |