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| PartNumber | IXFN80N50P | IXFN80N50 | IXFN80N50Q2 |
| Description | MOSFET 500V 80A | MOSFET 500V 80A | MOSFET 80 Amps 500V 0.06 Rds |
| Manufacturer | IXYS | IXYS | IXYS |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | Chassis Mount | Chassis Mount | Chassis Mount |
| Package / Case | SOT-227-4 | SOT-227-4 | SOT-227-4 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 500 V | 500 V | 500 V |
| Id Continuous Drain Current | 66 A | 80 A | 80 A |
| Rds On Drain Source Resistance | 65 mOhms | 55 mOhms | 60 mOhms |
| Vgs Gate Source Voltage | 30 V | 20 V | 30 V |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 700 W | 780 W | 890 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | HiPerFET | HyperFET | HyperFET |
| Packaging | Tube | Tube | Tube |
| Height | 9.6 mm | 9.6 mm | 9.6 mm |
| Length | 38.2 mm | 38.23 mm | 38.23 mm |
| Series | IXFN80N50 | IXFN80N50 | IXFN80N50 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 25.07 mm | 25.42 mm | 25.42 mm |
| Brand | IXYS | IXYS | IXYS |
| Forward Transconductance Min | 70 S | 70 S | - |
| Fall Time | 18 ns | 27 ns | 11 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 27 ns | 70 ns | 25 ns |
| Factory Pack Quantity | 10 | 10 | 10 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 70 ns | 102 ns | 60 ns |
| Typical Turn On Delay Time | 25 ns | 61 ns | 29 ns |
| Unit Weight | 1.058219 oz | 1.058219 oz | 1.058219 oz |