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| PartNumber | IXFP10N80P | IXFP10N60P | IXFP10N06P |
| Description | MOSFET 10 Amps 800V 1.1 Rds | MOSFET HiPERFET Id10 BVdass600 | |
| Manufacturer | IXYS | IXYS | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-220-3 | TO-220-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 800 V | 600 V | - |
| Id Continuous Drain Current | 10 A | 10 A | - |
| Rds On Drain Source Resistance | 1.1 Ohms | 740 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 5.5 V | - | - |
| Vgs Gate Source Voltage | 30 V | 30 V | - |
| Qg Gate Charge | 40 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 300 W | 200 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | HiPerFET | HiPerFET | - |
| Packaging | Tube | Tube | - |
| Height | 16 mm | 9.15 mm | - |
| Length | 10.66 mm | 10.66 mm | - |
| Series | IXFP10N80 | IXFP10N60 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Type | PolarHV HiPerFET Power MOSFET | - | - |
| Width | 4.83 mm | 4.83 mm | - |
| Brand | IXYS | IXYS | - |
| Forward Transconductance Min | 7 S | 11 S | - |
| Fall Time | 22 ns | 21 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 22 ns | 27 ns | - |
| Factory Pack Quantity | 50 | 50 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 62 ns | 65 ns | - |
| Typical Turn On Delay Time | 21 ns | 23 ns | - |
| Unit Weight | 0.081130 oz | 0.081130 oz | - |