 |  |  | |
| PartNumber | IXFP4N100PM | IXFP4N100P | IXFP4N100Q |
| Description | MOSFET DISCMOSFETN-CH HIPERFET-POLA | MOSFET 4 Amps 1000V | MOSFET 4 Amps 1000V 2.8 Rds |
| Manufacturer | IXYS | IXYS | IXYS |
| Product Category | MOSFET | MOSFET | Transistors - FETs, MOSFETs - Single |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-220FP-3 | TO-220-3 | - |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 1 kV | 1 kV | - |
| Id Continuous Drain Current | 2.1 A | 4 A | - |
| Rds On Drain Source Resistance | 3.3 Ohms | 3.3 Ohms | - |
| Vgs th Gate Source Threshold Voltage | 3 V | 6 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 26 nC | 26 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 40 W | 150 W | - |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | HiPerFET | HiPerFET | HyperFET |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Brand | IXYS | IXYS | - |
| Fall Time | 50 ns | 50 ns | 18 ns |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 36 ns | 36 ns | 15 ns |
| Factory Pack Quantity | 50 | 50 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 37 ns | 37 ns | 32 ns |
| Typical Turn On Delay Time | 24 ns | 24 ns | 17 ns |
| RoHS | - | Y | - |
| Packaging | - | Tube | Tube |
| Series | - | IXFP4N100 | IXFP4N100 |
| Forward Transconductance Min | - | 1.8 S | - |
| Unit Weight | - | 0.081130 oz | 0.081130 oz |
| Package Case | - | - | TO-220-3 |
| Pd Power Dissipation | - | - | 150 W |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 4 A |
| Vds Drain Source Breakdown Voltage | - | - | 1000 V |
| Rds On Drain Source Resistance | - | - | 3 Ohms |