PartNumber | IXFP5N100P | IXFP5N100PM | IXFP5N100P ROHS |
Description | MOSFET 5 Amps 1000V | MOSFET DISCMOSFETN-CH HIPERFET-POLA | |
Manufacturer | IXYS | IXYS | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | - | - |
Technology | Si | Si | - |
Mounting Style | Through Hole | Through Hole | - |
Package / Case | TO-220-3 | TO-220FP-3 | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 1 kV | 1 kV | - |
Id Continuous Drain Current | 5 A | 2.3 A | - |
Rds On Drain Source Resistance | 2.8 Ohms | 2.8 Ohms | - |
Vgs Gate Source Voltage | 30 V | 30 V | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 250 W | 42 W | - |
Configuration | Single | Single | - |
Tradename | HiPerFET | HiPerFET | - |
Packaging | Tube | - | - |
Series | IXFP5N100 | - | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Brand | IXYS | IXYS | - |
Product Type | MOSFET | MOSFET | - |
Factory Pack Quantity | 50 | 50 | - |
Subcategory | MOSFETs | MOSFETs | - |
Unit Weight | 0.081130 oz | - | - |
Vgs th Gate Source Threshold Voltage | - | 3 V | - |
Qg Gate Charge | - | 33.4 nC | - |
Channel Mode | - | Enhancement | - |
Fall Time | - | 37 ns | - |
Rise Time | - | 13 ns | - |
Typical Turn Off Delay Time | - | 30 ns | - |
Typical Turn On Delay Time | - | 12 ns | - |