PartNumber | IXFP8N65X2 | IXFP8N50PM | IXFP8N50P3 |
Description | MOSFET 650V/8A TO-220 | MOSFET N-CH 500V 4.4A TO-220 | MOSFET Polar3 HiPerFET Power MOSFETs |
Manufacturer | IXYS | - | IXYS |
Product Category | MOSFET | - | Transistors - FETs, MOSFETs - Single |
RoHS | Y | - | - |
Technology | Si | - | Si |
Mounting Style | Through Hole | - | Through Hole |
Package / Case | TO-220-3 | - | - |
Number of Channels | 1 Channel | - | - |
Transistor Polarity | N-Channel | - | N-Channel |
Vds Drain Source Breakdown Voltage | 650 V | - | - |
Id Continuous Drain Current | 8 A | - | - |
Rds On Drain Source Resistance | 450 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 3 V | - | - |
Vgs Gate Source Voltage | 10 V | - | - |
Qg Gate Charge | 11 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Pd Power Dissipation | 150 W | - | - |
Configuration | Single | - | - |
Channel Mode | Enhancement | - | - |
Tradename | HiPerFET | - | HyperFET |
Packaging | Tube | - | Tube |
Series | 650V Ultra Junction X2 | - | IXFP8N50 |
Transistor Type | 1 N-Channel | - | - |
Brand | IXYS | - | - |
Forward Transconductance Min | 3.6 S | - | - |
Fall Time | 15 ns | - | - |
Product Type | MOSFET | - | - |
Rise Time | 11 ns | - | - |
Factory Pack Quantity | 50 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 29 ns | - | - |
Typical Turn On Delay Time | 17 ns | - | - |
Unit Weight | - | - | 0.012346 oz |
Package Case | - | - | TO-220-3 |
Id Continuous Drain Current | - | - | 8 A |
Vds Drain Source Breakdown Voltage | - | - | 500 V |
Rds On Drain Source Resistance | - | - | 800 mOhms |