IXFR16N120P vs IXFR16N80P vs IXFR16N90Q

 
PartNumberIXFR16N120PIXFR16N80PIXFR16N90Q
DescriptionMOSFET 16 Amps 1200V 1 RdsMOSFET Polar HiperFET Power MOSFETMOSFET N-CH ISOPLUS247
ManufacturerIXYSIXYS-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-247-3TO-247-3-
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage1.2 kV--
Id Continuous Drain Current9 A--
Rds On Drain Source Resistance1.04 Ohms--
Vgs Gate Source Voltage30 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation230 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameHiPerFETHiPerFET-
PackagingTubeTube-
Height21.34 mm--
Length16.13 mm--
SeriesIXFR16N120IXFR16N80-
Transistor Type1 N-Channel--
Width5.21 mm--
BrandIXYSIXYS-
Fall Time35 ns--
Product TypeMOSFETMOSFET-
Rise Time28 ns--
Factory Pack Quantity3030-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time66 ns--
Typical Turn On Delay Time35 ns--
Unit Weight0.056438 oz0.056438 oz-
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