IXFR180N06 vs IXFR180N085 vs IXFR180N07

 
PartNumberIXFR180N06IXFR180N085IXFR180N07
DescriptionMOSFET 180 Amps 60V 0.005 RdsMOSFET 180 Amps 85V 0.007 RdsMOSFET 180 Amps 70V 0.006 Rds
ManufacturerIXYSIXYSIXYS
Product CategoryMOSFETTransistors - FETs, MOSFETs - SingleTransistors - FETs, MOSFETs - Single
RoHSY--
TechnologySiSiSi
Mounting StyleThrough HoleSMD/SMTSMD/SMT
Package / CaseTO-247-3--
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current180 A--
Rds On Drain Source Resistance5 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation560 W--
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
TradenameHyperFETHyperFETHyperFET
PackagingTubeTubeTube
Height21.34 mm--
Length16.13 mm--
SeriesIXFR180N06IXFR180N085IXFR180N07
Transistor Type1 N-Channel1 N-Channel1 N-Channel
Width5.21 mm--
BrandIXYS--
Fall Time55 ns55 ns55 ns
Product TypeMOSFET--
Rise Time100 ns90 ns90 ns
Factory Pack Quantity30--
SubcategoryMOSFETs--
Typical Turn Off Delay Time130 ns140 ns140 ns
Typical Turn On Delay Time63 ns65 ns65 ns
Unit Weight0.056438 oz0.056438 oz0.056438 oz
Package Case-TO-247-3TO-247-3
Pd Power Dissipation-400 W400 W
Vgs Gate Source Voltage-20 V20 V
Id Continuous Drain Current-180 A180 A
Vds Drain Source Breakdown Voltage-85 V70 V
Rds On Drain Source Resistance-7 mOhms6 mOhms
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