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| PartNumber | IXFR200N10P | IXFR20N100P | IXFR200N10 |
| Description | MOSFET 133 Amps 100V 0.0075 Rds | MOSFET 20 Amps 1000V 1 Rds | |
| Manufacturer | IXYS | IXYS | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-247-3 | TO-247-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 100 V | 1 kV | - |
| Id Continuous Drain Current | 133 A | 11 A | - |
| Rds On Drain Source Resistance | 9 mOhms | 640 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 5 V | 6.5 V | - |
| Vgs Gate Source Voltage | 20 V | 30 V | - |
| Qg Gate Charge | 235 nC | 126 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 150 C | - |
| Pd Power Dissipation | 300 W | 230 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | HiPerFET | HiPerFET | - |
| Packaging | Tube | Tube | - |
| Height | 21.34 mm | 21.34 mm | - |
| Length | 16.13 mm | 16.13 mm | - |
| Series | IXFR200N10 | IXFR20N100 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Type | Polar HiPerFET Power MOSFET | Polar Power MOSFET HiPerFET | - |
| Width | 5.21 mm | 5.21 mm | - |
| Brand | IXYS | IXYS | - |
| Forward Transconductance Min | 60 S | 8 S | - |
| Fall Time | 90 ns | 45 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 35 ns | 37 ns | - |
| Factory Pack Quantity | 30 | 30 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 150 ns | 56 ns | - |
| Typical Turn On Delay Time | 30 ns | 40 ns | - |
| Unit Weight | 0.056438 oz | 0.056438 oz | - |