IXFR50N50 vs IXFR55N50 vs IXFR52N30Q

 
PartNumberIXFR50N50IXFR55N50IXFR52N30Q
DescriptionMOSFET 43 Amps 500V 0.1 RdsMOSFET 48 Amps 500V 0.08 RdsMOSFET 52 Amps 300V
ManufacturerIXYSIXYSIXYS
Product CategoryMOSFETMOSFETTransistors - FETs, MOSFETs - Single
RoHSYY-
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-247-3TO-247-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage500 V500 V-
Id Continuous Drain Current43 A48 A-
Rds On Drain Source Resistance100 mOhms90 mOhms-
Vgs Gate Source Voltage20 V20 V-
Minimum Operating Temperature- 40 C- 40 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation400 W400 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameHyperFETHyperFET-
PackagingTubeTubeTube
Height21.34 mm21.34 mm-
Length16.13 mm16.13 mm-
SeriesIXFR50N50IXFR55N50IXFR52N30
Transistor Type1 N-Channel1 N-Channel-
Width5.21 mm5.21 mm-
BrandIXYSIXYS-
Fall Time45 ns45 ns-
Product TypeMOSFETMOSFET-
Rise Time60 ns60 ns-
Factory Pack Quantity30600-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time120 ns120 ns-
Typical Turn On Delay Time45 ns45 ns-
Unit Weight0.056438 oz0.056438 oz0.056438 oz
Package Case--TO-247-3
Id Continuous Drain Current--52 A
Vds Drain Source Breakdown Voltage--300 V
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