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| PartNumber | IXFR80N10Q | IXFR80N15Q | IXFR80N20Q |
| Description | MOSFET 80 Amps 100V 0.018 Rds | MOSFET 75 Amps 150V 0.0225 Rds | MOSFET 80 Amps 200V 0.03 Rds |
| Manufacturer | IXYS | IXYS | IXYS |
| Product Category | Transistors - FETs, MOSFETs - Single | Transistors - FETs, MOSFETs - Single | Transistors - FETs, MOSFETs - Single |
| Series | IXFR80N10 | IXFR80N15 | IXFR80N20 |
| Packaging | Tube | Tube | Tube |
| Unit Weight | 0.056438 oz | 0.056438 oz | 0.056438 oz |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package Case | TO-247-3 | TO-247-3 | TO-247-3 |
| Technology | Si | Si | Si |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Configuration | Single | Single | Single |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Pd Power Dissipation | 310 W | 310 W | 310 W |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Fall Time | 30 ns | 20 ns | 20 ns |
| Rise Time | 70 ns | 55 ns | 50 ns |
| Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
| Id Continuous Drain Current | 76 A | 75 A | 71 A |
| Vds Drain Source Breakdown Voltage | 100 V | 150 V | 200 V |
| Rds On Drain Source Resistance | 15 mOhms | 22.5 mOhms | 28 mOhms |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Typical Turn Off Delay Time | 68 ns | 68 ns | 75 ns |
| Typical Turn On Delay Time | 30 ns | 30 ns | 26 ns |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | - | HyperFET | HyperFET |