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| PartNumber | IXFT100N30X3HV | IXFT10N100Q | IXFT10N100 |
| Description | MOSFET DISCMSFT NCHULTRJNCTN X3CLASS | MOSFET 10 Amps 1000V 1.2 Rds | |
| Manufacturer | IXYS | - | IXYS |
| Product Category | MOSFET | - | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | - | - |
| Tradename | HiPerFET | - | HyperFET |
| Packaging | Tube | - | Tube |
| Brand | IXYS | - | - |
| Product Type | MOSFET | - | - |
| Factory Pack Quantity | 30 | - | - |
| Subcategory | MOSFETs | - | - |
| Series | - | - | IXFT10N100 |
| Unit Weight | - | - | 0.158733 oz |
| Mounting Style | - | - | SMD/SMT |
| Package Case | - | - | TO-268-2 |
| Technology | - | - | Si |
| Number of Channels | - | - | 1 Channel |
| Configuration | - | - | Single |
| Transistor Type | - | - | 1 N-Channel |
| Pd Power Dissipation | - | - | 300 W |
| Maximum Operating Temperature | - | - | + 150 C |
| Minimum Operating Temperature | - | - | - 55 C |
| Fall Time | - | - | 32 ns |
| Rise Time | - | - | 33 ns |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 10 A |
| Vds Drain Source Breakdown Voltage | - | - | 1000 V |
| Rds On Drain Source Resistance | - | - | 1.2 Ohms |
| Transistor Polarity | - | - | N-Channel |
| Typical Turn Off Delay Time | - | - | 62 ns |
| Typical Turn On Delay Time | - | - | 21 ns |
| Channel Mode | - | - | Enhancement |