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| PartNumber | IXFT16N120P | IXFT16N80P | IXFT16N120P-TRL |
| Description | MOSFET 16 Amps 1200V 1 Rds | MOSFET 16 Amps 800V 0.6 Rds | MOSFET IXFT16N120P TRL |
| Manufacturer | IXYS | IXYS | IXYS |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-268-3 | TO-268-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 1.2 kV | 800 V | - |
| Id Continuous Drain Current | 16 A | 16 A | - |
| Rds On Drain Source Resistance | 950 mOhms | 600 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 6.5 V | - | - |
| Vgs Gate Source Voltage | 30 V | 30 V | - |
| Qg Gate Charge | 120 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 660 W | 460 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | HiPerFET | HiPerFET | Polar |
| Packaging | Tube | Tube | Reel |
| Height | 5.1 mm | 5.1 mm | - |
| Length | 16.05 mm | 16.05 mm | - |
| Series | IXFT16N120 | IXFT16N80 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Type | Polar HiPerFET Power MOSFET | - | - |
| Width | 14 mm | 14 mm | - |
| Brand | IXYS | IXYS | IXYS |
| Forward Transconductance Min | 11 S | - | - |
| Fall Time | 35 ns | 29 ns | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 28 ns | 32 ns | - |
| Factory Pack Quantity | 30 | 30 | 400 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 66 ns | 75 ns | - |
| Typical Turn On Delay Time | 35 ns | 27 ns | - |
| Unit Weight | 0.158733 oz | 0.158733 oz | - |