IXFT30N50P vs IXFT30N40Q vs IXFT30N50

 
PartNumberIXFT30N50PIXFT30N40QIXFT30N50
DescriptionMOSFET 500V 30AMOSFET 30 Amps 400V 0.16 RdsMOSFET 30 Amps 500V 0.16 Rds
ManufacturerIXYSIXYS-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-268-3TO-268-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage500 V400 V-
Id Continuous Drain Current30 A30 A-
Rds On Drain Source Resistance200 mOhms160 mOhms-
Vgs Gate Source Voltage30 V20 V-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation460 W300 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameHiPerFETHyperFET-
PackagingTubeTube-
Height5.1 mm5.1 mm-
Length16.05 mm16.05 mm-
SeriesIXFT30N50IXFT30N40-
Transistor Type1 N-Channel1 N-Channel-
Width14 mm14 mm-
BrandIXYSIXYS-
Forward Transconductance Min27 S--
Fall Time24 ns12 ns-
Product TypeMOSFETMOSFET-
Rise Time24 ns35 ns-
Factory Pack Quantity3030-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time82 ns51 ns-
Typical Turn On Delay Time25 ns25 ns-
Unit Weight0.158733 oz0.158733 oz-
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