IXFT32N100XHV vs IXFT32N50Q vs IXFT32N50

 
PartNumberIXFT32N100XHVIXFT32N50QIXFT32N50
DescriptionMOSFET 1000V 32A TO-268HV Power MOSFETMOSFET 500V 32AMOSFET 32 Amps 500V 0.15 Rds
ManufacturerIXYSIXYSIXYS
Product CategoryMOSFETIC ChipsFETs - Single
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-268HV-3--
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage1000 V--
Id Continuous Drain Current32 A--
Rds On Drain Source Resistance220 mOhms--
Vgs th Gate Source Threshold Voltage3.5 V--
Vgs Gate Source Voltage30 V--
Qg Gate Charge130 nC--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation890 W--
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameHiPerFETHyperFET-
PackagingTubeTube-
SeriesX-ClassIXFT32N50-
Transistor Type1 N-Channel1 N-Channel-
BrandIXYS--
Forward Transconductance Min14 S--
Fall Time12 ns20 ns-
Product TypeMOSFET--
Rise Time12 ns42 ns-
Factory Pack Quantity30--
SubcategoryMOSFETs--
Typical Turn Off Delay Time80 ns75 ns-
Typical Turn On Delay Time29 ns35 ns-
Unit Weight-0.158733 oz-
Package Case-TO-268-2-
Pd Power Dissipation-416 W-
Vgs Gate Source Voltage-20 V-
Id Continuous Drain Current-32 A-
Vds Drain Source Breakdown Voltage-500 V-
Rds On Drain Source Resistance-160 mOhms-
Forward Transconductance Min-28 S-
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