PartNumber | IXFT32N100XHV | IXFT32N50Q | IXFT32N50 |
Description | MOSFET 1000V 32A TO-268HV Power MOSFET | MOSFET 500V 32A | MOSFET 32 Amps 500V 0.15 Rds |
Manufacturer | IXYS | IXYS | IXYS |
Product Category | MOSFET | IC Chips | FETs - Single |
RoHS | Y | - | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | TO-268HV-3 | - | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 1000 V | - | - |
Id Continuous Drain Current | 32 A | - | - |
Rds On Drain Source Resistance | 220 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 3.5 V | - | - |
Vgs Gate Source Voltage | 30 V | - | - |
Qg Gate Charge | 130 nC | - | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 890 W | - | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | Enhancement | - |
Tradename | HiPerFET | HyperFET | - |
Packaging | Tube | Tube | - |
Series | X-Class | IXFT32N50 | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Brand | IXYS | - | - |
Forward Transconductance Min | 14 S | - | - |
Fall Time | 12 ns | 20 ns | - |
Product Type | MOSFET | - | - |
Rise Time | 12 ns | 42 ns | - |
Factory Pack Quantity | 30 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 80 ns | 75 ns | - |
Typical Turn On Delay Time | 29 ns | 35 ns | - |
Unit Weight | - | 0.158733 oz | - |
Package Case | - | TO-268-2 | - |
Pd Power Dissipation | - | 416 W | - |
Vgs Gate Source Voltage | - | 20 V | - |
Id Continuous Drain Current | - | 32 A | - |
Vds Drain Source Breakdown Voltage | - | 500 V | - |
Rds On Drain Source Resistance | - | 160 mOhms | - |
Forward Transconductance Min | - | 28 S | - |