| PartNumber | IXFT80N085 | IXFT80N10 | IXFT80N08 |
| Description | MOSFET MOSFET, INTR DIODE 85V, 80A | MOSFET 80 Amps 100V 0.125 Rds | MOSFET 80 Amps 80V 0.009 Rds |
| Manufacturer | IXYS | IXYS | IXYS |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-268-3 | TO-268-3 | TO-268-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 85 V | 100 V | 80 V |
| Id Continuous Drain Current | 80 A | 80 A | 80 A |
| Rds On Drain Source Resistance | 9 mOhms | 12.5 mOhms | 9 mOhms |
| Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 300 W | 300 W | 300 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | HyperFET | HyperFET | HyperFET |
| Packaging | Tube | Tube | Tube |
| Height | 5.1 mm | 5.1 mm | - |
| Length | 16.05 mm | 16.05 mm | - |
| Series | IXFT80N08 | IXFT80N10 | IXFT80N08 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 14 mm | 14 mm | - |
| Brand | IXYS | IXYS | IXYS |
| Fall Time | 31 ns | 26 ns | 31 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 75 ns | 63 ns | 75 ns |
| Factory Pack Quantity | 30 | 30 | 30 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 95 ns | 90 ns | 95 ns |
| Typical Turn On Delay Time | 50 ns | 41 ns | 50 ns |
| Unit Weight | 0.158733 oz | 0.158733 oz | 0.158733 oz |