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| PartNumber | IXFT80N10 | IXFT80N10Q | IXFT80N15Q |
| Description | MOSFET 80 Amps 100V 0.125 Rds | MOSFET 80 Amps 100V 0.015 Rds | MOSFET 80 Amps 150V 0.0225 Rds |
| Manufacturer | IXYS | IXYS | IXYS |
| Product Category | MOSFET | Transistors - FETs, MOSFETs - Single | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | - | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-268-3 | - | - |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 100 V | - | - |
| Id Continuous Drain Current | 80 A | - | - |
| Rds On Drain Source Resistance | 12.5 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 300 W | - | - |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | HyperFET | HyperFET | HyperFET |
| Packaging | Tube | Tube | Tube |
| Height | 5.1 mm | - | - |
| Length | 16.05 mm | - | - |
| Series | IXFT80N10 | IXFT80N10 | IXFT80N15 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 14 mm | - | - |
| Brand | IXYS | - | - |
| Fall Time | 26 ns | 30 ns | 20 ns |
| Product Type | MOSFET | - | - |
| Rise Time | 63 ns | 70 ns | 55 ns |
| Factory Pack Quantity | 30 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 90 ns | 68 ns | 68 ns |
| Typical Turn On Delay Time | 41 ns | 30 ns | 30 ns |
| Unit Weight | 0.158733 oz | 0.158733 oz | 4500 g |
| Package Case | - | TO-268-2 | TO-268-2 |
| Pd Power Dissipation | - | 360 W | 360 W |
| Vgs Gate Source Voltage | - | 20 V | 20 V |
| Id Continuous Drain Current | - | 80 A | 80 A |
| Vds Drain Source Breakdown Voltage | - | 100 V | 150 V |
| Rds On Drain Source Resistance | - | 15 mOhms | 22.5 mOhms |