IXFX140N30P vs IXFX140N25T vs IXFX14N100

 
PartNumberIXFX140N30PIXFX140N25TIXFX14N100
DescriptionMOSFET 140 Amps 300V 0.024 Ohm RdsMOSFET 140A 250VMOSFET 14 Amps 1000V 0.75 Rds
ManufacturerIXYSIXYSIXYS
Product CategoryMOSFETMOSFETTransistors - FETs, MOSFETs - Single
RoHSYY-
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-247-3TO-247-3-
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage300 V250 V-
Id Continuous Drain Current140 A140 A-
Rds On Drain Source Resistance24 mOhms17 mOhms-
Vgs th Gate Source Threshold Voltage5 V5 V-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge185 nC255 nC-
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation1.04 kW960 W-
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
TradenameHiPerFETHiPerFETHyperFET
PackagingTubeTubeTube
Height21.34 mm21.34 mm-
Length16.13 mm16.13 mm-
SeriesIXFX140N30IXFX140N25IXFX14N100
Transistor Type1 N-Channel1 N-Channel1 N-Channel
TypePolar Power MOSFET HiPerFETGigaMOS Power MOSFET-
Width5.21 mm5.21 mm-
BrandIXYSIXYS-
Forward Transconductance Min50 S80 S-
Fall Time20 ns22 ns30 ns
Product TypeMOSFETMOSFET-
Rise Time30 ns29 ns30 ns
Factory Pack Quantity3030-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time100 ns92 ns120 ns
Typical Turn On Delay Time30 ns33 ns27 ns
Unit Weight0.056438 oz0.257500 oz0.056438 oz
Package Case--TO-247-3
Pd Power Dissipation--360 W
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--14 A
Vds Drain Source Breakdown Voltage--1000 V
Rds On Drain Source Resistance--750 mOhms
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