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| PartNumber | IXFX32N100Q3 | IXFX32N100P | IXFX32N48Q |
| Description | MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/32A | MOSFET 32 Amps 1000V 0.32 Rds | MOSFET N-CH PLUS247 |
| Manufacturer | IXYS | IXYS | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-247-3 | TO-247-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 1 kV | 1 kV | - |
| Id Continuous Drain Current | 32 A | 32 A | - |
| Rds On Drain Source Resistance | 320 mOhms | 320 mOhms | - |
| Vgs Gate Source Voltage | 30 V | 30 V | - |
| Qg Gate Charge | 195 nC | 225 nC | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 1.25 kW | 960 W | - |
| Configuration | Single | Single | - |
| Tradename | HiPerFET | HiPerFET | - |
| Packaging | Tube | Tube | - |
| Series | IXFX32N100 | IXFX32N100 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Brand | IXYS | IXYS | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 250 ns | 55 ns | - |
| Factory Pack Quantity | 30 | 30 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Unit Weight | 0.056438 oz | 0.056438 oz | - |
| Vgs th Gate Source Threshold Voltage | - | 6.5 V | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Channel Mode | - | Enhancement | - |
| Height | - | 21.34 mm | - |
| Length | - | 16.13 mm | - |
| Type | - | Polar Power MOSFET HiPerFET | - |
| Width | - | 5.21 mm | - |
| Forward Transconductance Min | - | 13 S | - |
| Fall Time | - | 43 ns | - |
| Typical Turn Off Delay Time | - | 76 ns | - |
| Typical Turn On Delay Time | - | 50 ns | - |