IXGH100N30C3 vs IXGH10N100 vs IXGH100N30B3

 
PartNumberIXGH100N30C3IXGH10N100IXGH100N30B3
DescriptionIGBT Transistors 100 Amps 300VIGBT Transistors 1000V 20A
ManufacturerIXYSIXYS-
Product CategoryIGBT TransistorsIGBT Transistors-
RoHSYY-
TechnologySiSi-
Package / CaseTO-247AD-3TO-247AD-3-
Mounting StyleThrough Hole--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max300 V--
Collector Emitter Saturation Voltage1.53 V--
Maximum Gate Emitter Voltage20 V--
Continuous Collector Current at 25 C75 A--
Pd Power Dissipation460 W--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesIXGH100N30IXGH10N100-
PackagingTubeTube-
Continuous Collector Current Ic Max500 A--
Height21.46 mm--
Length16.26 mm--
Operating Temperature Range- 55 C to + 150 C--
Width5.3 mm--
BrandIXYSIXYS-
Continuous Collector Current75 A--
Gate Emitter Leakage Current100 nA--
Product TypeIGBT TransistorsIGBT Transistors-
Factory Pack Quantity3030-
SubcategoryIGBTsIGBTs-
TradenameGenX3--
Unit Weight0.229281 oz--
Top