IXGH40N120A2 vs IXGH40N120C3 vs IXGH40N120B2D1

 
PartNumberIXGH40N120A2IXGH40N120C3IXGH40N120B2D1
DescriptionIGBT Transistors SGL IGBT 1200V, 80AIGBT Transistors 75Amps 1200VIGBT Transistors IGBT, Diode 1200V, 75A
ManufacturerIXYSIXYSIXYS
Product CategoryIGBT TransistorsIGBT TransistorsIGBT Transistors
RoHSYYY
TechnologySiSiSi
Package / CaseTO-247AD-3TO-247AD-3TO-247AD-3
Mounting StyleThrough Hole-Through Hole
ConfigurationSingle-Single
Collector Emitter Voltage VCEO Max1.2 kV-1.2 kV
Collector Emitter Saturation Voltage2 V-2.9 V
Maximum Gate Emitter Voltage20 V-20 V
Continuous Collector Current at 25 C75 A-75 A
Pd Power Dissipation360 W-380 W
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 150 C-+ 150 C
SeriesIXGH40N120IXGH40N120IXGH40N120
PackagingTubeTubeTube
Continuous Collector Current Ic Max160 A-200 A
Height21.46 mm-21.46 mm
Length16.26 mm-16.26 mm
Operating Temperature Range- 55 C to + 150 C-- 55 C to + 150 C
Width5.3 mm-5.3 mm
BrandIXYSIXYSIXYS
Continuous Collector Current75 A-75 A
Gate Emitter Leakage Current100 nA-100 nA
Product TypeIGBT TransistorsIGBT TransistorsIGBT Transistors
Factory Pack Quantity303030
SubcategoryIGBTsIGBTsIGBTs
Unit Weight0.229281 oz0.225753 oz0.229281 oz
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