IXGH40N120C3D1 vs IXGH40N120C3 vs IXGH40N120C3D1 ROHS

 
PartNumberIXGH40N120C3D1IXGH40N120C3IXGH40N120C3D1 ROHS
DescriptionIGBT Transistors 75Amps 1200VIGBT Transistors 75Amps 1200V
ManufacturerIXYSIXYS-
Product CategoryIGBT TransistorsIGBT Transistors-
RoHSYY-
TechnologySiSi-
Package / CaseTO-247AD-3TO-247AD-3-
Mounting StyleThrough Hole--
Collector Emitter Voltage VCEO Max1.2 kV--
Collector Emitter Saturation Voltage4.4 V--
Maximum Gate Emitter Voltage20 V--
Continuous Collector Current at 25 C75 A--
Pd Power Dissipation380 W--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesIXGH40N120IXGH40N120-
PackagingTubeTube-
Continuous Collector Current Ic Max180 A--
Height21.46 mm--
Length16.26 mm--
Operating Temperature Range- 55 C to + 150 C--
Width5.3 mm--
BrandIXYSIXYS-
Continuous Collector Current75 A--
Gate Emitter Leakage Current100 nA--
Product TypeIGBT TransistorsIGBT Transistors-
Factory Pack Quantity3030-
SubcategoryIGBTsIGBTs-
TradenameGenX3--
Unit Weight1.340411 oz0.225753 oz-
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