IXGH48N60B3 vs IXGH48N60B3D1 vs IXGH48N60B3C1

 
PartNumberIXGH48N60B3IXGH48N60B3D1IXGH48N60B3C1
DescriptionIGBT Modules 48 Amps 600VIGBT Transistors 75 Amps 600V 1.05 V RdsIGBT Transistors G-SERIES GENX3SIC IGBT 600V 48A
ManufacturerIXYSIXYSIXYS
Product CategoryIGBT ModulesIGBT TransistorsIGBT Transistors
RoHSYYY
ProductIGBT Silicon Modules--
ConfigurationSingleSingle-
Collector Emitter Saturation Voltage600 V1.8 V-
Gate Emitter Leakage Current100 nA100 nA-
Pd Power Dissipation300 W300 W-
Package / CaseTO-247AD-3TO-247AD-3-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
PackagingTubeTubeTube
Height21.46 mm21.46 mm-
Length16.26 mm16.26 mm-
SeriesIXGH48N60IXGH48N60IXGH48N60
Width5.3 mm5.3 mm-
BrandIXYSIXYSIXYS
Mounting StyleThrough HoleThrough Hole-
Maximum Gate Emitter Voltage20 V20 V-
Product TypeIGBT ModulesIGBT Transistors-
Factory Pack Quantity303030
SubcategoryIGBTsIGBTs-
TradenameGenX3GenX3GenX3
Unit Weight0.056438 oz0.229281 oz0.229281 oz
Technology-Si-
Collector Emitter Voltage VCEO Max-600 V-
Continuous Collector Current Ic Max-280 A-
Operating Temperature Range-- 55 C to + 150 C-
Continuous Collector Current-48 A-
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