IXGK100N170 vs IXGK120N120A3 vs IXGK120N120B3

 
PartNumberIXGK100N170IXGK120N120A3IXGK120N120B3
DescriptionIGBT Transistors HIGH VOLT NPT IGBTS 1700V 100AIGBT Transistors 120 Amps 1200VIGBT Transistors 200Amps 1200V
ManufacturerIXYSIXYSIXYS
Product CategoryIGBT TransistorsIGBT TransistorsIGBT Transistors
RoHSYYY
TechnologySiSiSi
Package / CaseTO-264-3TO-264-3-
Mounting StyleThrough HoleThrough Hole-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max1.7 kV1.2 kV-
Collector Emitter Saturation Voltage2.5 V1.85 V-
Maximum Gate Emitter Voltage20 V20 V-
Continuous Collector Current at 25 C170 A240 A-
Pd Power Dissipation830 W830 W-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesIXGK100N170IXGK120N120IXGK120N120
PackagingTubeTubeTube
Continuous Collector Current Ic Max600 A600 A-
Height26.59 mm26.59 mm-
Length20.29 mm20.29 mm-
Operating Temperature Range- 55 C to + 150 C- 55 C to + 150 C-
Width5.31 mm5.31 mm-
BrandIXYSIXYSIXYS
Continuous Collector Current170 A240 A-
Gate Emitter Leakage Current200 nA400 nA-
Product TypeIGBT TransistorsIGBT TransistorsIGBT Transistors
Factory Pack Quantity252525
SubcategoryIGBTsIGBTsIGBTs
Unit Weight0.373904 oz0.352740 oz-
Tradename-GenX3-
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