IXGN100N170 vs IXGN100N160A vs IXGN100N120

 
PartNumberIXGN100N170IXGN100N160AIXGN100N120
DescriptionIGBT Transistors HIGH VOLT NPT IGBTS 1700V 95AIGBT Transistors 100 Amps 1600VIGBT Transistors G-series
ManufacturerIXYSIXYSIXYS
Product CategoryIGBT TransistorsIGBT TransistorsIGBT Transistors
RoHSYYY
TechnologySiSiSi
Package / CaseSOT-227B-4--
Mounting StyleSMD/SMT--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max1.7 kV--
Collector Emitter Saturation Voltage2.5 V--
Maximum Gate Emitter Voltage20 V--
Continuous Collector Current at 25 C160 A--
Pd Power Dissipation735 W--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesIXGN100N170IXGN100N160IXGN100N120
PackagingTubeTubeTube
Continuous Collector Current Ic Max600 A--
Height9.6 mm--
Length38.23 mm--
Operating Temperature Range- 55 C to + 150 C--
Width25.42 mm--
BrandIXYSIXYSIXYS
Continuous Collector Current160 A--
Gate Emitter Leakage Current200 nA--
Product TypeIGBT TransistorsIGBT TransistorsIGBT Transistors
Factory Pack Quantity101010
SubcategoryIGBTsIGBTsIGBTs
Unit Weight1.058219 oz--
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