IXGP48N60B3 vs IXGP48N60A3 vs IXGP42N30C3

 
PartNumberIXGP48N60B3IXGP48N60A3IXGP42N30C3
DescriptionIGBT Transistors DISC IGBT PT-MID FREQUENCYIGBT Transistors DISC IGBT PT-LOW FREQUENCYIGBT Transistors 42 Amps 300V
ManufacturerIXYSIXYSIXYS
Product CategoryIGBT TransistorsIGBT TransistorsIGBT Transistors
TechnologySiSiSi
Package / CaseTO-220-3TO-220-3-
Mounting StyleThrough HoleThrough Hole-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max600 V600 V-
Collector Emitter Saturation Voltage1.8 V1.18 V-
Maximum Gate Emitter Voltage20 V20 V-
Continuous Collector Current at 25 C280 A120 A-
Pd Power Dissipation300 W300 W-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
BrandIXYSIXYSIXYS
Gate Emitter Leakage Current100 nA100 nA-
Product TypeIGBT TransistorsIGBT TransistorsIGBT Transistors
Factory Pack Quantity505050
SubcategoryIGBTsIGBTsIGBTs
Continuous Collector Current Ic Max-300 A-
RoHS--Y
Series--IXGP42N30
Packaging--Tube
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