 |  | | |
| PartNumber | IXGX50N120C3H1 | IXGX50N60 | IXGX50N60A2U1 |
| Description | IGBT Modules High Frequency Range 40khz C-IGBT w/Diode | ||
| Manufacturer | IXYS | - | - |
| Product Category | IGBT Modules | - | - |
| Product | IGBT Silicon Modules | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 1.2 kV | - | - |
| Collector Emitter Saturation Voltage | 2.6 V | - | - |
| Continuous Collector Current at 25 C | 95 A | - | - |
| Gate Emitter Leakage Current | 100 nA | - | - |
| Package / Case | PLUS247-3 | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | IXGX50N120 | - | - |
| Brand | IXYS | - | - |
| Mounting Style | Through Hole | - | - |
| Maximum Gate Emitter Voltage | 20 V | - | - |
| Product Type | IGBT Modules | - | - |
| Factory Pack Quantity | 30 | - | - |
| Subcategory | IGBTs | - | - |